SD56120M Datasheet, PDF (1/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
SD56120M
RF POWER TRANSISTORS
The LdmoST FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSH-
PULL
• P_OUT = 120 W WITH 13 dB gain @ 860 MHz /32V
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
M252
epoxy sealed
ORDER CODE
SD56120M
BRANDING
SD56120M
DESCRIPTION
The SD56120M is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broad-
band performance operating in common source
mode at 32 V. Its internal matching makes it ideal for
TV broadcast applications requiring high linearity.
PIN CONNECTION
1
2
3
5
4
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
March, 11 2003
Value
65
± 20
14
236
200
-65 to +150
0.55
Unit
V
V
A
W
°C
°C
°C/W
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