SD2932_04 Datasheet, PDF (3/12 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

TYPICAL PERFORMANCE
Maximum Thermal Resistance vs. Case Temperature
Safe Operating Area
SD2932
0.42
0.4
0.38
0.36
0.34
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (°C)
100
(1)
10
1
1
10
100
Vds, DRAIN SOURCE VOLTAGE (V)
(1) Current in this area may be limited by Rds(on)
Two sides, each section equally loaded
1000
Capacitance vs. Drain-Source Voltage
Drain Current vs. Gate Voltage
10000
1000
100
10
0
Ciss
Coss
Crss
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
20
Vds=10 V
15
10
T=+25 °C
T=-20 °C
T=+80 °C
5
0
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE-SOURCE VOLTAGE (V)
Gate Voltage vs. Case Temperature
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
-25
Id=9 A
Id=5 A
Id=10 A
Id=7 A
Id=11 A
Id=4 A
Id=2 A
Id=.1 A
Id=1 A
Id=.25 A
0
25
50
75
100
Tcase, CASE TEMPERATURE (°C)
3/12