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SD2932_04 Datasheet, PDF (2/12 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
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SD2932
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC (Per Section)
Symbol
V(BR)DSS VGS = 0 V
IDSS
VGS = 0 V
IGSS
VGS = 20 V
VGS(Q)
VDS = 10 V
VDS(ON) VGS = 10 V
GFS
VDS = 10 V
CISS
VGS = 0 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
Test Conditions
IDS = 100 mA
VDS = 50 V
VDS = 0 V
ID = 250 mA
ID = 10 A
ID = 5 A
VDS = 50 V
VDS = 50 V
VDS = 50 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min. Typ. Max. Unit
125
V
50
µA
250
nA
1.5
4
V
3
V
5
mho
480
pF
190
pF
18
pF
DYNAMIC
Symbol
POUT
GPS
ηD
Load
Mismatch
Test Conditions
VDD = 50 V IDQ = 500 mA
VDD = 50 V IDQ = 500 mA POUT = 300 W
VDD = 50 V IDQ = 500 mA POUT = 300 W
VDD = 50 V IDQ = 500 mA POUT = 300 W
All Phase Angles
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 175 MHz
Min.
300
15
50
5:1
Typ.
16
60
Max. Unit
W
dB
%
VSWR
IMPEDANCE DATA
Typical Input
Impedance
G
Zin
D
ZDL
Typical Drain
Load Impedance
S
FREQ
ZIN (Ω)
ZDL (Ω)
175 MHz
0.92 - j 0.14 3.17 + j 4.34
Measured Gate to Gate and Drain to Drain, respectively.
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