SD2932_04 Datasheet, PDF (1/12 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2932
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
• GOLD METALLIZATION
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH PULL
• P_OUT = 300 W MIN. WITH 15 dB GAIN @
175 MHz
M244
epoxy sealed
DESCRIPTION
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 it is
intended for use in 50 V dc large signal
applications up 250 MHz.
PIN CONNECTION
1
1
3
2
1. Drain
2. Gate
3
2
3. Source
ORDER CODES
Order Codes
SD2932
Marking
SD2932
Package
M244
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain Source Voltage
V_DGR
Drain-Gate Voltage (R_GS = 1MΩ)
V_GS
Gate-Source Volatge
I_D
Drain Current
P_DISS
Power Dissipation
T_j
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
July 2004
Packaging
Plastic Tray
Value
Unit
125
V
125
V
±20
V
40
A
500
W
+200
°C
-65 to +150
°C
0.35
°C/W
REV. 5
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