IRF640 Datasheet, PDF (3/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF640/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
Pa ram et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 100 V ID = 9 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 160 V I_D = 18 A V_GS = 10V
Min.
T yp.
13
27
55
10
21
Max.
17
35
72
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 160 V I_D = 18 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
T yp.
21
25
50
Max.
27
32
65
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 18 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 18 A di/dt = 100 A/µs
V_DD = 50 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
18
72
Unit
A
A
1.5
V
240
ns
1.8
µC
15
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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