IRF640 Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF640
®
IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRF640
IRF640FP
200 V
200 V
< 0.18 Ω
< 0.18 Ω
18 A
18 A
s TYPICAL R_DS(on) = 0.150 Ω
s EXTREMELY HIGH dV/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
2
1
TO-220
3
2
1
TO-220FP
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
Value
Un it
IRF640
I RF 640F P
V DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Voltage (VGS = 0)
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
200
200
± 20
18
18(**)
11
11(**)
72
72
125
40
1.0
0.32
V
V
V
A
A
A
W
W /^o C
dv/dt(1) Peak Diode Recovery voltage slope
5
5
V/ns
V_ISO I nsulat ion Wit hstand Voltage (DC)

2000
V
T_stg Storage Temperature
-65 to 150
o_C
T_j Max. Operating Junction Temperature
150
o_C
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed
October 1999
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