IRF640 Datasheet, PDF (2/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF640/FP
THERMAL DATA
Rthj-case
R _{th j -a mb}
R_thc-sink
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.0
TO-220FP
3.12
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
18
280
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V _{(BR)D SS}
I_DSS
I_GSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
I_D = 250 µ A V_GS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
Min.
200
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 9 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
V_GS = 10 V
Min.
2
T yp.
3
Max.
4
Unit
V
0.15 0.18
Ω
18
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D = 9 A
V_DS = 25 V f = 1 MHz V_GS = 0
Min.
7
T yp.
11
Max.
Unit
S
1200 1560 pF
200 260
pF
60
80
pF
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