ESDAXLC6-1MY2 Datasheet, PDF (3/11 Pages) STMicroelectronics – Extra low capacitance single line TVS

ESDAXLC6-1MY2
Characteristics
Figure 3.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 4.
Capacitance (fF)
500
450
400
350
300
250
200
150
100
0
1
2
C (fF)
500
F = 200 MHz
450
Vosc = 30 mV ₄₀₀
350
300
250
200
Voltage (V) ¹⁵⁰
3
4
5 ₁₀₀
1
Junction capacitance versus
frequency (V_r = 0 V, typical values)
V_r = 0 V
V_osc = 30 mV
Frequency (MHz)
10
100
1000
10000
Figure 5. S21 (dB) attenuation
S21 (dB)
0.00
- 2.00
-4.00
-6.00
-8.00
-10.00
- 12.00
-14.00
10.0M 30.0M
100.0M 300.0M
1.0G
f (Hz)
3.0G 10.0G
Figure 7. ESD response to IEC 61000-4-2
(+ 8 kV contact discharge)
Figure 6.
Relative variation of leakage
current versus junction
temperature (typical values)
I_R[T_j]/I_R[T_j = 25 °C]
10000
V_R = 3 V
T_jinitial = 25 °C
1000
100
10
1
T_j (°C)
25
50
75
100
125
Figure 8. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
20 V/div
20 V/div
C2
C2
20 ns/div
20 ns/div
Doc ID 16923 Rev 2
3/11