ESDAVLC8-4BN4 Datasheet, PDF (3/10 Pages) STMicroelectronics – 4-line very low capacitance Transil™ array for ESD protection

ESDAVLC8-4BN4
Characteristics
Figure 3. Peak pulse power versus initial
junction temperature (8/20 µs waveform)
Ppp (W)
100
80
8/20 µs
Direct
Reverse
60
40
Figure 4. Peak pulse power versus exponential
pulse duration
100 ^PPP(W)
Tj=25 °C
Direct
Reverse
10
20
T_j (°C)
0
1
25 35 45 55 65 75 85 95 105 115 125 135 145
10
t_p (µs)
100
1000
Figure 5. Clamping voltage versus peak pulse Figure 6. Junction capacitance versus reverse
current (typical values, 8/20 µs waveform)
voltage applied (typical values)
10.0
I_PP(A)
8/20µs
Tj initial = 25 °C
Direct
Reverse
1.0
C(pF)
5.0
4.0
3.0
2.0
F=1 MHz
Vosc =30mVRMS
Vr=0V
Tj=25 °C
Direct
Reverse
0.1
10
1.0
V_CL (V)
0.0
VR(V)
20
30
0
1
2
3
4
5
6
Figure 7. ESD response to IEC 61000-4-2
(+8 kV contact discharge) on each channel
Figure 8. ESD response to IEC 61000-4-2
(-8 kV contact discharge) on each channel
10 V/div
10 V/div
20 ns/div
20 ns/div
DocID022192 Rev 3
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