ESDAVLC8-4BN4 Datasheet, PDF (2/10 Pages) STMicroelectronics – 4-line very low capacitance Transil™ array for ESD protection

Characteristics
1
Characteristics
ESDAVLC8-4BN4
Symbol
Table 1. Absolute maximum ratings (T_amb = 25 °C)
Parameter
Value
Unit
V_PP Peak pulse voltage, IEC 61000-4-2, level 4 (contact discharge)
Peak pulse power dissipation (8/20 µs)⁽¹⁾
P_{PP Tj initial = Tamb}
GND to I/O
I/O to GND
16
kV
45
W
32
I_pp Peak pulse current (8/20 µs)
1.6
A
T_j Maximum junction temperature range
-40 to 125
°C
T_stg Storage temperature range
-55 + 150
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Symbol
V_BR
=
V_CL
=
I_RM
=
V_RM
=
I_PP
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ V_RM
Stand-off voltage
Peak pulse current
Note:
Symbol
Table 2. Electrical characteristics (values, T_amb = 25 °C)
Test conditions
Min. Typ. Max. Unit
V_BR1 I_R = 1 mA, GND to I/O
8.5
11 14
V
V_BR2 I_R = 1 mA, I/O to GND
14.5 17 20
V
I_RM
V_RM = 3 V
50
nA
I_pp = 1 A, 8/20 µs, GND to I/O
V_CL
I_pp = 1 A, 8/20 µs, I/O to GND
20
V
28
C
V_I/O = 0 V, F = 1 MHz, V_osc = 30 mV
4.5 5.5 pF
Dynamic resistance,
R_d
pulse width 100 ns
I/O to GND
GND to I/O
0.36
Ω
0.28
For component test in its final application, the minimum clamping voltage has to be 20 V on
V_BR1 (GND to I/O) and 25 V on V_BR2 (I/O to GND).
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