ESDAVLC12-1BV2 Datasheet, PDF (3/9 Pages) STMicroelectronics – Single line bidirectional TVS diode for ESD protection

ESDAVLC12-1BV2
1.1
Characteristics (curves)
Figure 3: Junction capacitance versus applied
voltage
C(pF)
7
6
5
4
3
2
1
0
0
2
4
6
8
V_R(V)
10
12
Figure 5: ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Characteristics
Figure 4: Variation of leakage current versus
junction temperature (typical values)
5 ^IR(nA)
V_R = V_RM = 10.5 V
Forward and reverse
4
3
Reverse
2
Forward
1
T_j(°C)
0
0
25
50
75
100
125
150
Figure 6: ESD response to IEC 61000-4-2
(-8 kV contact discharge)
IPP(A)
22
Figure 7: TLP measurements
20
18
16
14
12
10
Linear (Voltage Forward (VF))
8
Linear (Breakdown (VBR))
6
4
2
VCL(V)
0
0 5 10 15 20 25 30 35 40 45 50
Figure 8: S21 attenuation measurement result
S21(dB)
0
-5
-10
-15
-20
-25
-30
-35
F( H z)
-40
10M
30M
100M
300M
1G
3G
I -O
DocID027160 Rev 2
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