ESDAVLC12-1BV2 Datasheet, PDF (2/9 Pages) STMicroelectronics – Single line bidirectional TVS diode for ESD protection

Characteristics
ESDAVLC12-1BV2
1
Characteristics
Symbol
Table 1: Absolute ratings (Tamb = 25 °C)
Parameter
Value
Unit
VPP
Peak pulse voltage
IEC 61000-4-2:
Contact discharge
8
kV
Air discharge
15
IPP
Peak pulse current
8/20μs
Tstg
Storage junction temperature range
Tj
Maximum operating junction temperature
TL
Maximum temperature for soldering during 10 s
1.5
A
-65 to +150
°C
-40 to +125
260
°C
Figure 2: Electrical characteristics (definitions)
Symbol
VBR
IRM
Rd
VCL
VCL
Cline
Table 2: Electrical characteristics (Tamb = 25 °C)
Test condition
Min.
IR = 1 mA
12
VRM = 10.5 V
Dynamic resistance, 100 ns pulse duration
IPP = 1 A; 8/20 µs
8 kV contact discharge after 30 ns IEC 61000-4-2
F = 1 MHz, VR = 0 V
Typ.
2.5
33
7
Max.
70
2
20
10
Unit
V
nA
Ω
V
pF
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DocID027160 Rev 2