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BU508AF Datasheet, PDF (3/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
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BU508AF
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 1500V
VCE = 1500V; TC= 125°C
0.2 mA
2 mA
IEBO
Emitter cut-off current
(IC =0)
VEB = 9V
1 mA
Collector-emitter
VCEO(sus) (1) sustaining voltage
IC = 100mA
700
V
(IC =0)
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 4.5A
IB = 1.6A
1
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 4.5A
IB = 2A
1.1 V
hFE (1) DC current gain
IC = 0.1A
IC = 4.5A
VCE = 5V 10
VCE = 5V 5
30
Inductive load
IC = 4.5A
IB(on) = 0.5A
ts
Storage time
VBE(off) = -2.7V fh = 16KHz
2.5
µs
tf
Fall time
LBB(off) = 4.5µH
0.2
µs
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
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