BU508AF Datasheet, PDF (1/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

BU508AF
High voltage NPN Power transistor for standard
Definition CRT display
Preliminary Data
Features
■ State-of-the-art technology:
– Diffused collector “Enhanced generation”
■ Stable performances versus operating
temperature variation
■ Low base-drive requirement
■ Tight h_FE range at operating collector current
■ High ruggedness
■ Fully insulated power package U.L. compliant
■ In compliance with the 2002/93/EC European
directive
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ISOWATT218FX
Applications
■ Horizontal deflection output for CRT TV
■ Switch mode power supplies for CRT TV
Internal schematic diagram
Description
The BU508AF is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure for updated
performance to the Horizontal Deflection stage.
Order codes
Part Number
BU508AF
Marking
BU508AF
Package
ISOWATT218FX
Packaging
Tube
March 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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