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BU508AF Datasheet, PDF (2/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
Electrical ratings
1
Electrical ratings
BU508AF
Table 1. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
PTOT
Vins
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc = 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _______________max
Value
1500
700
9
8
15
4
50
2500
-65 to 150
150
Value
2.5
Unit
V
V
V
A
A
A
W
V
°C
Unit
°C/W
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