BAT20J Datasheet, PDF (3/5 Pages) STMicroelectronics – HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE

BAT20J
Fig. 1: Peak forward current versus ambient
temperature (δ = 0.11).
IP(A)
3.0
2.5
Printed circuit board FR4
SCU=2.25mm²
2.0
1.5
1.0
T
0.5
δ=tp/T
tp
0.0
Tamb(°C)
0
25
50
75
100
125
150
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
IF(AV)(A)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
δ=tp/T
tp
0.00
0
25
Tamb(°C)
50
75
Printed circuit board FR4
SCU=2.25mm²
100
125
150
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration .
Zth(j-a)/Rth(j-a)
1.E+00
Single pulse
SCU=2.25mm²
1.E-01
Fig. 4: Reverse leakage currrent versus reverse
voltage applied (typical values).
IR(µA)
1.E+04
Tj=150°C
1.E+03
1.E+02
Tj=85°C
1.E-02
1.E-03
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+01
1.E+00
Tj=25°C
VR(V)
1.E-01
0 2 4 6 8 10 12 14 16 18 20 22 24
Fig. 5: Relative variation of reverse leakage
currrent versus junction temperature (typical
values).
IR(Tj) / IR(Tj=25°C)
1.E+04
VR=5V
1.E+03
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
1.E+02
10
1.E+01
1.E+00
Tj(°C)
1.E-01
1
0
25
50
75
100
125
150
1
VR(V)
10
100
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