BAT20J Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE

BAT20J
THERMAL RESISTANCE
Symbol
Parameter
R_{th (j-a)} Junction to Ambient (*)
(*) Mounted on epoxy board without copper heat sink.
Value
600
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Tests conditions
I_R * Reverse leakage current Tj = 25°C
(see note 1)
I_R * Reverse leakage current Tj = 85°C
V_F ** Forward voltage drop
Tj = 25°C
V_R = 5 V
V_R = 8 V
V_R = 15 V
V_R = 5 V
V_R = 8 V
V_R = 15 V
I_F = 10 mA
I_F = 100 mA
I_F = 1 A
* Pulse test tp = 380 µs, δ < 2%
** Pulse test tp = 5 ms, δ < 2%
Note 1: I_R at 23 V and Tj = 25°C is equal to 60 µA typ.
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Tests conditions
C_d Diode capacitance V_R = 5 V F = 1 MHz
To evaluate the maximum conduction losses, use the following equations :
P = 0.32 x I_F(AV) + 0.23 x I_F2(RMS)
Min. Typ. Max. Unit
0.65 2
µA
0.88 3
3.00 12
55 120
70 150
120 250
0.28 0.31 V
0.35 0.40
0.54 0.62
Min.
Typ. Max. Unit
20 30 pF
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