BAT20J Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE

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BAT20J
HIGH EFFICIENCY SWITCHING AND
ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
I_R 25°C(max) @ 15V
Tj (max)
1A
23 V
12 µA
150 °C
A
K
FEATURES AND BENEFITS
■ Low conduction losses
■ Very low reverse current
■ Negligible switching losses
■ Low capacitance diode
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
DESCRIPTION
The BAT20J is using 23V schottky barrier diode
encapsulated on a SOD-323 package. This is spe-
cially suited for switching mode in mobile phone
and PDA power management applications or LED
driver circuits (step up converters).
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
T_stg
Tj
TL
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
Average forward current
δ = 0.38
Surge non repetitive forward current (t_p=10ms sinusoidal)
Maximum storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during *
Value
23
2
1
5
- 65 to +150
150
260
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
Order code
Part Number
BAT20JFILM
April 2004 - Ed: 1
Marking
20
Unit
V
A
A
A
°C
°C
°C
1/5