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2N5551HR Datasheet, PDF (3/10 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 160 V - 0.5 A
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2N5551HR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector-base cut-off VCB = 120 V
current (IE = 0)
VCB = 120 V
TC = 150 °C
50 nA
-
50 µA
IEBO
Emitter-base cut-off
current (IC = 0)
VEB = 4 V
-
50 nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 µA
180 -
V
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
IC = 1 mA
160 -
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 µA
6
-
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
0.15 V
-
0.2 V
VBE(sat) (1)
Base-emitter
saturation voltage
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
1
V
-
1
V
hFE (1) DC current gain
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 10 mA
Tamb = - 55 °C
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
80
80
250
30
-
20
hfe
Small signal current
gain
VCE = 10 V
f = 1 kHz
IC = 1 mA
50
- 200
hfe
Small signal current
gain
VCE = 10 V
f > 100 MHz
IC = 10 mA
1
-
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
Cebo
Emitter-base
capacitance (IC = 0)
VEB = 5 V
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
f = 1 MHz
f = 1 MHz
-
6
pF
-
20 pF
Doc ID 16935 Rev 3
3/10
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