2N5551HR Datasheet, PDF (2/10 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 160 V - 0.5 A

Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage (I_C = 0)
Collector current
for 2N5551HR
for SOC5551HRB
P_TOT
Total dissipation at T_amb ≤ 25 °C
for 2N5551HR
for SOC5551HRB
for SOC5551HRB ⁽¹⁾
Total dissipation at T_c ≤ 25 °C
for 2N5551HR
T_STG Storage temperature
T_J Max. operating junction temperature
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
Table 3. Thermal data for through-hole package
Symbol
Parameter
R_thJC
R_thJA
Thermal resistance junction-case __
Thermal resistance junction-ambient __
max
max
Table 4.
Symbol
Thermal data for SMD package
Parameter
R_thJA
Thermal resistance junction-ambient __
Thermal resistance junction-ambient ⁽¹⁾ __
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
max
max
2N5551HR
Value
Unit
180
V
160
V
6
V
0.6
A
0.5
A
0.36
W
0.36
W
0.58
W
1.2
W
-65 to 200
°C
200
°C
Value
146
486
Unit
°C/W
°C/W
Value
486
302
Unit
°C/W
°C/W
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Doc ID 16935 Rev 3