2N5551HR Datasheet, PDF (1/10 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 160 V - 0.5 A

2N5551HR
Hi-Rel NPN bipolar transistor 160 V - 0.5 A
Features
BV_CEO
I_C (max)
H_FE at 5 V - 10 mA
Operating temperature range
160 V
0.5 A
> 80
-65°C to +200°C
1
2
3
TO-18
3
1
2
LCC-3
■ Linear gain characteristics
■ ESCC qualified
■ European preferred part list - EPPL
■ 100 krad low dose rate
■ Hermetic packages
Description
The 2N5551HR is a silicon planar epitaxial NPN
transistor in TO-18, TO-39 and LCC-3 packages.
It is specifically designed for aerospace Hi-Rel
applications and ESCC qualified according to the
5201-019 specification. In case of conflict
between this datasheet and ESCC detailed
specification, the latter prevails.
TO-39
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
ESCC Part
number
Qual. Level
Rad.
level
Packages
Lead Finish
Mass
(g)
EPPL
2N5551UB1
-
Eng. Model
2N5551UB 5201/019/08 or 09 ESCC Flight
LCC-3UB
Gold
0.06
-
LCC-3UB Gold / Solder Dip ⁽¹⁾ 0.06
-
SOC5551
-
Eng. Model
SOC5551HRB 5201/019/04 or 05 ESCC Flight
LCC-3
Gold
0.06
-
LCC-3 Gold / Solder Dip ⁽¹⁾ 0.06
Y
SOC5551SW 5201/019/05 ESCC Flight 100 krad LCC-3
Solder Dip
0.06 Y
2N5551/T1
2N5551HR
2N5551SHR
-
Eng. Model
5201/019/01 or 02 ESCC Flight
5201/019/06 or 07 ESCC Flight
TO-18
Gold
0.40
-
TO-18 Gold / Solder Dip ⁽¹⁾ 0.40
-
TO-39 Gold / Solder Dip ⁽¹⁾ 1.20
-
1. Depending ESCC part number mentioned on the purchase order.
July 2010
Doc ID 16935 Rev 3
1/10
www.st.com
10