STE36N50-DK Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE

STE36N50-DK
DIODE ABSOLUTE MAXIMUM RATINGS
Symb ol
V_RRM
VRS M
I_{F(RMS )}
I_FRM
Pto t
Pa ra met er
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
RMS Forward Current
Repet. Peak Forward Current (t_p = 5 µs, f = 5KHz)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Valu e
600
600
50
300
70
0. 56
Unit
V
V
A
A
W
W/^oC
THERMAL DATA
Rthj-case
R_thj-case
R_thc-h
Thermal Resistance Junction-case (MOSFET)
Thermal Resistance Junction-case (DIO DE)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.3
1.78
0.05
o_{C/ W}
o_{C/ W}
o_{C/ W}
AVALANCHE CHARACTERISTICS
Symb ol
I_{A R}
EAS
E_AR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_{D D} = 50 V)
Repetitive Avalanche Energy
(pulse width limited by T_j max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 ^oC, pulse width limited by Tj max, δ < 1%)
Max Value
14
100
40
9
Unit
A
mJ
mJ
A
MOSFET ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0
I_DSS
IG SS
Zero Gate Voltage
Drain Current (V_GS = 0)
Gate-body Leakage
Current (V_{D S} = 0)
V_DS = Max Rating
V_DS = Max Rating x 0.8
VGS = ± 20 V
T_c = 125 ^oC
Min.
500
Typ.
Max.
Unit
V
300
µA
1500 µA
± 300 nA
ON (∗)
Symb ol
VG S(th)
R_DS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On V_GS = 10V I_D = 18 A
R esist anc e
VGS = 10V ID = 18 A Tc = 100 ^oC
On St ate Drain Current V_DS > I_{D( on)} x R_{D S(on) max}
V_GS = 10 V
Min.
2
36
Typ.
3
0. 12
Max.
4
0. 14
0. 28
Unit
V
Ω
Ω
A
2/9