STD9N10 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD9N10
THERMAL DATA
R_{t hj-ca se}
R_{t hj- amb}
R_{thc- si nk}
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
3.33
100
1.5
275
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E _AS
EAR
I_AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 ^oC, pulse width limited by Tj max, δ < 1%)
Max Value
9
30
7
6
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0. 8 T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 20 V
Min.
100
Typ . Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON (∗)
Symb ol
V _{GS(th )}
RDS( o n )
I_{D(o n)}
P a ram et er
Test Conditions
Gate T hreshold Voltage V_DS = V_GS I_D = 250 µA
St atic Drain-source On VGS = 10V ID = 4.5 A
Re s is ta nc e
V_GS = 10V I_D = 4.5 A T_c = 100 ^oC
On State Drain Current V_DS > I_D(on) x R_DS(on)max
VGS = 10 V
Min.
2
9
Typ .
3
0.23
M a x.
4
0.27
0.54
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
g_fs (∗)
C_iss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 4.5 A
Min.
2
Typ .
4
M a x.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
330 450 pF
90 120 pF
25
40
pF
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