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| STD95NH02L Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET | |||
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STD95NH02L
Table 3: Absolute Maximum ratings
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID (*)
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(1) Garanted when external Rg = 4.7 ⦠and tf < tf max.
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, ID = 40A, VDD = 22V
(*) Value limited by wires
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering
Purpose
Value
30
24
24
± 20
80
68
320
100
0.67
600
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1.5
°C/W
100
°C/W
275
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
24
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
1
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 40 A
VGS = 5 V, ID =40 A
0.0039 0.005
â¦
0.0055 0.009
â¦
2/11
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