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ESDAVLC8-1BM2 Datasheet, PDF (2/13 Pages) STMicroelectronics – Single line low capacitance Transil for ESD protection
Characteristics
1
Characteristics
ESDAVLC8-1BM2, ESDAVLC8-1BT2
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
VPP(1)
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
MIL STD 883G - Method 3015-7: class 3
PPP(1) Peak pulse power dissipation (8/20 µs)
Tj initial = Tamb
IPP Peak pulse current (8/20 µs)
TOP Operating junction temperature range
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Value
Unit
17
17
kV
25
30
W
1.3
A
- 55 to + 150 °C
- 65 to + 150 °C
260
°C
Symbol
VBR
=
VCL
=
IRM
=
VRM
=
IPP
=
IR
=
IPP
=
RI/O
=
Cline
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ VRM
Stand-off voltage
Peak pulse current
Breakdown current
Forward current
Series resistanc between input and output
Input capacitance per line
I
IR
VBR VRM
IRM
IRM VRM VBR
V
IR
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test condition
Min. Typ. Max. Unit
VBR
IRM
Rd
Cline
From pin1 to pin2, IR = 1 mA direct
From pin2 to pin1, IR = 1 mA reverse
VRM = 3 V
Square pulse, IPP = 1 A tp = 2.5 µs
F = 1 MHz, VR = 0 V
14.5
17
V
8.5
11
50
nA
2
Ω
4.5
5.5
pF
2/13
Doc ID 16937 Rev 1