ESDAVLC6-1BV2 Datasheet, PDF (2/9 Pages) STMicroelectronics – Bidirectional device

Characteristics
1
Characteristics
ESDAVLC6-1BV2
Table 1. Absolute maximum ratings (T_amb = 25 °C)
Symbol
Parameter
V_PP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
I_PP
Peak pulse current (8/20 µs)⁽¹⁾
P_PP
Peak pulse power (8/20 µs)⁽¹⁾
T_j
Operating temperature range
T_stg
Storage temperature range
T_L
Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Symbol
V_BR
=
V_RM
=
V_CL
=
I_RM
=
I_PP
=
R_D
=
C_LINE =
Parameter
Breakdown voltage
Stand-off voltage
Clamping voltage
Leakage current @ V_RM
Peak pulse current
Dynamic resistance
Line capacitance
VCL VBR VRM
Slope: 1/Rd
Value
Unit
12
kV
15
2.5
A
45
W
-55 to +150
°C
- 65 to +150
°C
260
°C
I
IRM
V
VRM VBR VCL
IPP
Table 2. Electrical characteristics (values, T_amb = 25 °C)
Symbol
Parameter
Test conditions
V_BR
I_RM
V_CL
C_line
Breakdown voltage
I_R = 1 mA
Leakage current
V_RM = 3 V
Clamping voltage
I_PP = 1 A, 8/20 µs
I_PP = 2.5 A maximum, 8/20 µs
Line capacitance, I/O to GND V_R = 0 V, F = 1 MHz, V_osc = 30 mV
Value
Unit
Min. Typ. Max.
6
V
50 nA
12
V
18
7.5
8
pF
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Doc ID 023822 Rev 1