ST7L34 Datasheet, PDF (196/234 Pages) –

Electrical characteristics
ST7L34 ST7L35 ST7L38 ST7L39
13.6.3 EEPROM data memory
T_A = -40 to +125°C, unless otherwise specified.
Table 115. Characteristics of EEPROM data memory
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Refer to operating
range of V_DD with T_A,
V_DD
Operating voltage for EEPROM Section 13.3.1:
write/erase
General operating
3.0
5.5 V
conditions on
page 182
t_prog
Programming time for 1~32 bytes T_A = −40 to +125 °C
5
10 ms
t(s) ^{Data retention with 1 k cycling}
(T_PROG = −40 to +125 °C
20
duc ^tRET(1)
Data retention with 10 k cycling
(T_PROG = −40 to +125 °C)
T_A = 55 °C⁽²⁾
10
Years
ro _{Data retention with 100 k cycling}
P _{(TPROG = −40 to +125 °C)}
1
te 1. Data based on reliability test results and monitored in production
le 2. The data retention time increases when the T_A decreases
Obso ^13.7
Obsolete ^{Product(s) - 13.7.1}
Electromagnetic compatibility (EMC) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional electromagnetic susceptibility (EMS)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs). See Table 116: Electromagnetic test results on page 197.
● ESD: Electro-static discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the
IEC 1000 - 4 - 2 standard.
● FTB: A burst of fast transient voltage (positive and negative) is applied to V_DD and V_SS
through a 100pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000 - 4 - 4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
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