SI8641BD-B-IS Datasheet, PDF (16/44 Pages) STMicroelectronics – LOW-POWER QUAD-CHANNEL DIGITAL ISOLATOR

Si8640/41/42/45
Table 6. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance)¹
Symbol
L(IO1)
Test Condition
Value
WB
SOIC-16
NB
SOIC-16
QSOP-16
Unit
8.0
4.9
3.6
mm
Nominal External Tracking
(Creepage)¹
L(IO2)
8.0
4.01
3.6
mm
Minimum Internal Gap
(Internal Clearance)
0.014
0.014
0.014
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
V_RMS
Erosion Depth
ED
0.019 0.019 0.031 mm
Resistance (Input-Output)²
Capacitance (Input-Output)²
Input Capacitance³
R_IO
10¹²
10¹²
10¹²

C_IO
f = 1 MHz
2.0
2.0
2.0
pF
C_I
4.0
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 and QSOP-16 packages and 8.5 mm minimum for the WB
SOIC-16 package. UL does not impose a clearance and creepage minimum for component-level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-16, 3.6 mm for QSOP-16 packages
and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
NB SOIC-16 WB SOIC-16
I
I
I-IV
I-IV
I-III
I-IV
I-II
I-III
I-II
I-III
16
Rev. 1.6