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SI8641BD-B-IS Datasheet, PDF (12/44 Pages) STMicroelectronics – LOW-POWER QUAD-CHANNEL DIGITAL ISOLATOR
◁
Si8640/41/42/45
Table 4. Electrical Characteristics
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
VDD Undervoltage Threshold VDDUV+
VDD Undervoltage Threshold VDDUV–
VDD Undervoltage
Hysteresis
VDDHYS
VDD1, VDD2 rising
VDD1, VDD2 falling
1.95
1.88
50
2.24
2.375
V
2.16
2.325 V
70
95
mV
Positive-Going Input Thresh- VT+
old
All inputs rising
1.4
1.67
1.9
V
Negative-Going Input Thresh- VT–
old
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance1
Enable Input High Current
Enable Input Low Current
VHYS
0.38
VIH
2.0
VIL
—
VOH
loh = –4 mA
VDD1,
VDD2 – 0.4
VOL
lol = 4 mA
—
IL
—
ZO
—
IENH
VENx = VIH
—
IENL
VENx = VIL
—
DC Supply Current (All inputs 0 V or at supply)
0.44
—
—
2.3
0.2
—
50
2.0
2.0
0.50
V
—
V
0.8
V
—
V
0.4
V
±10
µA
—

—
µA
—
µA
Si8640Bx, Ex, Si8645Bx
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
1.0
1.6
mA
—
2.4
3.8
—
6.1
9.2
—
2.5
4.0
Si8641Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
1.4
2.2
mA
—
2.3
3.7
—
5.2
7.8
—
3.6
5.4
Si8642Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
1.8
2.9
mA
—
1.8
2.9
—
4.4
6.6
—
4.4
6.6
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
12
Rev. 1.6
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