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| CLP200M Datasheet, PDF (13/21 Pages) STMicroelectronics – OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE | |||
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ABSOLUTE MAXIMUM RATINGS (RSENSE = 4 â¦, and Tamb = 25 °C)
Symbol
IPP
ITSM
Tstg
Tj
TL
Parameter
Test Conditions
Line to GND peak surge
current
10/1000µs (open circuit voltage
wave shape 10/1000µs)
5/310µs (open circuit voltage
wave shape 10/700µs)
Mains power induction
current
VRMS = 300V, R = 600â¦
t = 200ms
Mains power contact current
VRMS = 220V, R = 10â¦
(failure status threshold)
t = 200 ms
VRMS = 220V, R = 600â¦
t = 15 mn
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s
CLP200M
Value
Unit
100
A
130
A
0.5
A
22
A
0.30
A
- 40 to + 150 °C
150
260
°C
ELECTRICAL CHARACTERISTICS (RSENSE = 4 â¦, and Tamb = 25°C)
Symbol
ILGL
Vref
VSWON
ISWOFF
ISWON
C
Parameter
Line to GND leakage
current
Overvoltage internal
reference
Line to GND voltage at SW1
or SW2 switching-on
Line to GND current at SW1
or SW2 switching-off
Line current at SW1 or SW2
switching-on
Line to GND capacitance
Test Conditions
. VLG = 200 V
. Measured between TIP
(or RING) and GND
. ILG = 1 mA
. Measured between TIP
(or RING) and GND
. Measured at 50 Hz between
TIPL (or RINGL) and GND
. Refer to test circuit page 14
. Positive pulse
. Negative pulse
. VLG = -1 V + 1VRMS
. F = 1 MHz
Value
Unit
Min. Max.
10 µA
215
V
290 V
150
mA
180 280 mA
220 320
200 pF
13/21
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