STM32L432KB Datasheet, PDF (129/149 Pages) STMicroelectronics – Batch acquisition mode

STM32L432KB STM3L432KC
Electrical characteristics
Table 70. OPAMP characteristics⁽¹⁾ (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
PGA Gain = 2
- 80/80 -
R_network
R2/R1 internal
resistance
values in PGA
mode⁽⁵⁾
PGA Gain = 4
PGA Gain = 8
PGA Gain = 16
-
120/
40
-
-
140/
20
kΩ/kΩ
-
-
150/
10
-
Resistance
Delta R
variation (R1 or
-
R2)
-15
-
15
%
PGA gain error PGA gain error
-
-1
-
1
%
Gain = 2
-
-
GBW/
2
-
PGA BW
PGA bandwidth ^{Gain = 4}
for different non
inverting gain _{Gain = 8}
-
-
GBW/
4
-
MHz
-
-
GBW/
8
-
Gain = 16
-
-
GBW/
16
-
Normal mode
at 1 kHz, Output
loaded with 4 kΩ
-
500
-
en
Voltage noise
density
Low-power mode
Normal mode
at 1 kHz, Output
loaded with 20 kΩ
at 10 kHz, Output
loaded with 4 kΩ
-
600
-
nV/√Hz
-
180
-
Low-power mode
at 10 kHz, Output
loaded with 20 kΩ
-
290
-
I_DDA(OPAMP)⁽³⁾
OPAMP
consumption
from V_DDA
Normal mode
no Load, quiescent
Low-power mode ^mode
-
120 260
µA
-
45 100
1. Guaranteed by design, unless otherwise specified.
2. The temperature range is limited to 0 °C-125 °C when V_DDA is below 2 V
3. Guaranteed by characterization results.
4. Mostly I/O leakage, when used in analog mode. Refer to I_lkg parameter in Table 56: I/O static characteristics.
5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between
OPAMP inverting input and ground. The PGA gain =1+R2/R1
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