STM32F411XC Datasheet, PDF (120/149 Pages) STMicroelectronics – Clock, reset and supply management

Electrical characteristics
STM32F411xC STM32F411xE
6.3.22 V_BAT monitoring characteristics
Symbol
Table 73. V_BAT monitoring characteristics
Parameter
Min
Typ
R
Q
Er⁽¹⁾
T_{S_vbat(2)(2)}
Resistor bridge for V_BAT
Ratio on V_BAT measurement
Error on Q
ADC sampling time when reading the V_BAT
1 mV accuracy
-
50
-
4
–1
-
5
-
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Max
-
-
+1
-
Unit
KΩ
%
µs
6.3.23 Embedded reference voltage
The parameters given in Table 74 are derived from tests performed under ambient
temperature and V_DD supply voltage conditions summarized in Table 14.
Table 74. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min _Typ Max Unit
V_REFINT
T_{S_vrefint(1)}
Internal reference voltage
ADC sampling time when reading the
internal reference voltage
- 40 °C < T_A < + 125 °C
-
V_{RERINT_s(2)}
Internal reference voltage spread over the
temperature range
V_DD = 3V ± 10mV
T_Coeff(2) Temperature coefficient
-
t_START(2) Startup time
-
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
1.18
10
-
-
-
1.21
-
3
30
6
1.24
V
-
µs
5
mV
50 ppm/°C
10
µs
Table 75. Internal reference voltage calibration values
Symbol
Parameter
Memory address
V_{REFIN_CAL}
Raw data acquired at temperature of
30 °C V_DDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B
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