STM8L152C8T6 Datasheet, PDF (119/134 Pages) STMicroelectronics – 8-bit ultralow power MCU, up to 64 KB Flash + 2 KB data EEPROM, RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators

STM8L15xx8, STM8L15xR6
Electrical parameters
9.3.15
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
• ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to V_DD and V_SS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 58. EMS data
Symbol
Parameter
Conditions
V_FESD
Voltage limits to be applied on ^VDD ^{= 3.3 V, T}A ^{= +25 °C,}
any I/O pin to induce a functional f_CPU= 16 MHz,
disturbance
conforms to IEC 61000
V_EFTB
Fast transient voltage burst limits
to be applied through 100 pF on
V_DD and V_SS pins to induce a
functional disturbance
V_DD = 3.3 V, T_A = +25 °C,
f_CPU = 16 MHz,
conforms to IEC 61000
Using HSI
Using HSE
Level/
Class
2B
4A
2B
DocID17943 Rev 6
119/134
121