OA1MPA Datasheet, PDF (10/28 Pages) STMicroelectronics – Medical instrumentation

Electrical characteristics
OA1MPA, OA2MPA, OA4MPA
V_CC+ = 5 V with V_CC- = 0 V, V_icm = V_CC/2, T = 25 °C, and R_L = 10 k connected to V_CC/2
(unless otherwise specified)
Symbol
Parameter
Table 6. Electrical characteristics
Conditions
DC performance
V_io
V_io/T
V_io
I_io
I_ib
CMR
SVR
A_vd
EMIRR
V_OH
V_OL
I_out
T = 25 °C
Input offset voltage
-40 °C < T< 85 °C
Input offset voltage drift
-40 °C < T< 125 °C
-40 °C < T< 125 °C⁽¹⁾
Long-term input offset voltage
drift
T = 25 °C⁽²⁾
Input offset current
(V_out = V_CC/2)
T = 25 °C
-40 °C < T< 125 °C
Input bias current
(V_out = V_CC/2)
T = 25 °C
-40 °C < T< 125 °C
Common mode rejection ratio
20 log (V_icm/V_io)
V_icm = 0 V to V_CC,
V_out = V_CC/2, R_L > 1 M
T = 25 °C
-40 °C < T< 125 °C
Supply voltage rejection ratio
20 log (V_CC/V_io)
V_CC = 1.5 to 5.5 V, V_ic = 0 V,
R_L > 1 M
T = 25 °C
-40 °C < T< 125 °C
Large signal voltage gain
T = 25 °C
V_out = 0.5 V to (V_CC - 0.5 V) _{-40 °C < T< 125 °C}
EMI rejection ratio
EMIRR = 20 log
(V_RFpeak/V_io)
High level output voltage
(V_OH = V_CC - V_out)
V_{RF = 100 mVRFpeak,} f = 400 MHz
V_{RF = 100 mVRFpeak,} f = 900 MHz
V_{RF = 100 mVRFpeak,} f = 1800 MHz
V_{RF = 100 mVRFpeak,} f = 2400 MHz
T = 25 °C
-40 °C < T< 125 °C
Low level output voltage
T = 25 °C
-40 °C < T< 125 °C
I_sink (V_out = V_CC)
T = 25 °C
-40 °C < T< 125 °C
I_{source (}V_out = 0 V)
T = 25 °C
-40 °C < T< 125 °C
Min. Typ. Max. Unit
200
850
V
1200
10 V/°C
0.7
----------^-----V-----------
month
1
10⁽³⁾
1 300⁽³⁾
pA
1
10⁽³⁾
1 300⁽³⁾
74 94
73
71 90
71
dB
95
85
38⁽⁴⁾
50⁽⁴⁾
60⁽⁴⁾
63⁽⁴⁾
75
80
mV
40
60
35 56
20
mA
35 45
20
10/28
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