M28F420 Datasheet, PDF (10/38 Pages) STMicroelectronics – 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

M28F410, M28F420
Table 13. Read AC Characteristics ⁽¹⁾
(TA = 0 to 70°C or –40 to 85°C; VPP = 12V ± 5%)
Symbol Alt
Parameter
M28F410 / 20
-70
-80
-100
-120
VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10% VCC = 5V ± 10% ^Unit
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min Max Min Max Min Max Min Max
t_AVAV
t_RC
Address Valid to
Next Address Valid
70
80
100
120
ns
tAVQV
tACC
Address Valid to
Output Valid
70
80
100
120 ns
t_PHQV
t_PWH
Power Down High
to Output Valid
300
300
300
300 ns
tELQX ⁽²⁾
tLZ
Chip Enable Low to
Output Transition
0
0
0
0
ns
t_ELQV ⁽³⁾
t_CE
Chip Enable Low to
Output Valid
70
80
100
120 ns
tGLQX ⁽²⁾
tOLZ
Output Enable Low
to Output Transition
0
0
0
0
ns
tGLQV ⁽³⁾
tOE
Output Enable Low
to Output Valid
35
40
45
50 ns
tEHQX ⁽²⁾
tOH
Chip Enable High
to Output Transition
0
0
0
0
ns
tEHQZ ⁽²⁾
tHZ
Chip Enable High
to Output Hi-Z
25
30
35
35 ns
tGHQX ⁽²⁾
tOH
Output Enable High
to Output Transition
0
0
0
0
ns
tGHQZ ⁽²⁾
tDF
Output Enable High
to Output Hi-Z
25
30
35
35 ns
tAXQX ⁽²⁾
tOH
Address Transition
to Output Transition
0
0
0
0
ns
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Sampled only, not 100% tested.
3. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
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