M28F420 Datasheet, PDF (1/38 Pages) STMicroelectronics – 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

M28F410
M28F420
4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
DUAL x8 and x16 ORGANIZATION
SMALL SIZE PLASTIC PACKAGES TSOP56
and SO44
MEMORY ERASE in BLOCKS
– One 16K Byte or 8K Word Boot Block (top or
bottom location) with hardware write and
erase protection
– Two 8K Byte or 4K Word Key Parameter
Blocks
– One 96K Byte or 48K Word Main Block
– Three 128K Byte or 64K Word Main Blocks
5V ± 10% SUPPLY VOLTAGE
12V ± 5% PROGRAMMING VOLTAGE
100,000 PROGRAM/ERASE CYCLES
PROGRAM/ERASE CONTROLLER
AUTOMATIC STATIC MODE
LOW POWER CONSUMPTION
– 60μA Typical in Standby
– 0.2μA Typical in Deep Power Down
– 20/25mA Typical Operating Consumption
(Byte/Word)
HIGH SPEED ACCESS TIME: 70ns
EXTENDED TEMPERATURE RANGES
PRELIMINARY DATA
TSOP56 (N)
14 x 20mm
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC VPP
Table 1. Signal Names
A0-A17
DQ0-DQ7
DQ8-
DQ14
DQ15A-1
E
G
W
BYTE
RP
VPP
VCC
Address Inputs
Data Input / Outputs
Data Input / Outputs
Data Input/Output or Address Input
Chip Enable
Output Enable
Write Enable
Byte/Word Organization
Reset/Power Down/Boot Block Unlock
Program & Erase Supply Voltage
Supply Voltage
18
A0-A17
RP
W
E
G
M28F410
M28F420
DQ15A-1
15
DQ0-DQ14
BYTE
VSS
AI01130C
March 1995
This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice.
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