STW82101B Datasheet, PDF (1/68 Pages) STMicroelectronics – RF down converter with embedded integer-N synthesizer

STW82101B
RF down converter with embedded integer-N synthesizer
Features
■ High linearity:
– IIP3: +24.5 dBm
– 2FRF-2FLO spurious rejection: 75 dBc
■ Noise figure:
– NF: 9.5 dB
■ Conversion gain
– CG: 8.5 dB
■ RF range: 695 MHz to 960 MHz
■ Wide IF amplifier frequency range: 70 MHz to
400 MHz
■ Integrated RF balun with internal matching
■ Dual differential integrated VCOs with
automatic center frequency calibration:
– LOA: 850 to 1025 MHz
– LOB: 1025 to 1185 MHz
■ Embedded integer-N synthesizer
– Dual modulus programmable prescaler
(16/17 or 19/20)
– Programmable reference frequency divider
(10 bits)
– Adjustable charge pump current
– Digital lock detector
– Excellent integrated phase noise
– Fast lock time: 150 µs
■ Integrated DAC with dual current output
■ Supply: 3.3 V and 5 V analog,
3.3 V digital
■ Dual digital bus interface: SPI and I²C bus (fast
mode) with 3 bit programmable address
(1101A₂A₁A₀)
■ Process: 0.35 µm BICMOS SiGe
■ Operating temperature range -40 to +85^oC
■ 44-lead exposed pad VFQFPN
package 7x7x1.0 mm
Datasheet −production data
VFQFPN-44
Applications
■ Cellular infrastructure equipment:
– IF sampling receivers
– Digital PA linearization loops
■ Other wireless communication systems.
Table 1. Device summary
Part number
Package
STW82101B
VFQFPN-44
STW82101BTR VFQFPN-44
Packaging
Tray
Tape and reel
Description
The STMicroelectronics STW82101B is an
integrated down converter providing 8.5 dB of
gain, 9.5 dB NF, and a very high input linearity by
means of its passive mixer.
Embedding two wide band auto calibrating VCOs
and an integer-N synthesizer, the STW82101B is
suitable for both Rx and Tx requirements for
Cellular infrastructure equipment.
The integrated RF balun and internal matching
permit direct 50 ohm single-ended interface to RF
port. The IF output is suitable for driving 200-ohm
impedance filters.
By embedding a DAC with dual current output to
drive an external PIN diode attenuator, the
STW82101B replaces several costly discrete
components and offers a significant footprint
reduction.
The STW82101B device is designed with
STMicroelectronics advanced 0.35 µm
SiGe process. Its performance is specified over a
-40 °C to +85 °C temperature range.
May 2012
This is information on a product in full production.
Doc ID 018503 Rev 3
1/68
www.st.com
1