STD105N10F7AG Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STD105N10F7AG
Automotive-grade N-channel 100 V, 6.8 mΩ typ., 80 A,
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS RDS(on) max. ID PTOT
STD105N10F7AG 100 V 8 mΩ 80 A 120 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
 Designed for automotive applications and
AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STD105N10F7AG
AM01475v1_Tab
Table 1: Device summary
Marking
Package
105N10F7
DPAK
Packing
Tape and reel
June 2016
DocID027071 Rev 4
This is information on a product in full production.
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