M69KB096AB Datasheet, PDF (1/73 Pages) STMicroelectronics – 64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

M69KB096AB
64 Mbit (4 Mb x16), 104MHz Clock Rate,
1.8V Supply, Bare Die, Burst PSRAM
PRELIMINARY DATA
Features summary
■ Supply Voltage
– V_CC = 1.7 to 1.95V core supply voltage
– V_CCQ = 1.7 to 1.95V for I/O buffers
■ User-selectable Operating Modes
– Asynchronous Modes: Random Read, and
Write, Page Read
– Synchronous Modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
■ Asynchronous Random Read
– Access Time: 70ns
■ Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
■ Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 104MHz
– Output delay: 7ns at 104MHz
■ Low Power Consumption
– Active Current: < 25mA
– Standby Current: 140µA
– Deep Power-Down Current: < 10µA
■ Low Power Features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated Self-
Refresh
■ Operating Temperature
– –30°C to +85°C
Wafer
The M69KB096AB is only available as part of a multi-chip package Product.
November 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1
1/73
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