M58PR256J Datasheet, PDF (1/114 Pages) STMicroelectronics – 256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories

M58PR256J
M58PR512J
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst)
1.8 V supply Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase and
read
– V_DDQ = 1.7 V to 2.0 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108 MHz, 66 MHz
– Asynchronous Page Read mode
– Random access: 96 ns
Not packaged separately
■ Programming time
– 4.2 µs typical Word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple Bank Memory Array: 32 Mbit
Banks (256 Mbit devices); 64 Mbit Banks
(512 Mbit devices)
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ Common Flash Interface (CFI)
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer Code: 20h
– 256 Mbit Device: 8818
– 512 Mbit Device: 8819
■ Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V_PP = V_SS
The M58PRxxxJ memories are only available as part of a multi-chip package device.
December 2006
Rev 3
1/114
www.st.com
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