STC6614 Datasheet, PDF (3/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
N
P
60
-60
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA N 1.0
VDS=VGS,ID=-250uA P -1.0
3.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V N
VDS=0V,VGS=±20V P
±100
±100 ^nA
VDS=48V,VGS=0V N
1
Zero Gate Voltage Drain
Current
IDSS
VDS=-48V,VGS=0V P
TJ=55℃ VDS=48V,VGS=0V N
-1
5 uA
VDS=-48V,VGS=0V P
-5
On-State Drain Current
ID(on)
VDS≧5V,VGS=10V N 20
VDS≦-5V,VGS=-10V ^{P -20}
A
VGS=10V, ID=10.0A N
0.035 0.040
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-10.0A P
VGS=4.5V, ID=6.0A N
0.060 0.072 _Ω
0.040 0.048
VGS=-4.5V,ID=-5.0 A P
0.080 0.093
Forward Tran Conductance
gfs
VDS=5V,ID=6.3A N
VDS=-5V,ID=-5.9A P
27
18
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V N
IS=-1.7A,VGS=0V P
1.2
-1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
N-Channel
N
VDS=30V,VGS=10V P
47.7
45.2
Qgs
ID≡6.3A
N
P-Channel
P
6
5.8
nC
Qgd
VDS=-30V,VGS=-10V N
ID≡-5.0A
P
14.5
9.6
N-Channel
N
8
td(on)
VDS=30V,RL=4.7Ω P
9
tr
VGS=10V,RGEN=3Ω N
9
P
6.2
P-Channel
N
25
nS
td(off) ^{VDS=-30V,RL=6.2Ω P}
44
tf
VGS=-10V,RGEN=3Ω N
10
P
13.2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1