STC6614 Datasheet, PDF (1/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
DESCRIPTION
The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
FEATURE
N-Channel
60V/7.0A, RDS(ON) = 35mΩ(Typ.)
@VGS = 10V
60V/4.0A, RDS(ON) = 40mΩ
@VGS = 4.5V
PART MARKING
P-Channel
-60V/-5.0A, RDS(ON) = 60mΩ(Typ.)
@VGS = -10V
-60V/-3.0A, RDS(ON)= 80mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package
Y∶Year
A∶Product Code
Q︰Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1