STC6614 Datasheet, PDF (2/8 Pages) Stanson Technology – N&P Pair Enhancement Mode MOSFET

STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
N
P
60
-60
Gate-Source Voltage
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
VGSS
ID
IDM
IS
PD
TJ
±20
±20
7.0
-5.0
5.2
-4.0
40
-30
3
-3
2.3
2.3
1.3
1.3
150
Storgae Temperature Range
Thermal Resistance-Junction T≦10Sec
to Ambient
Sready State
TSTG
RθJA
-55/150
62.5
110
62.5
110
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1