STC6332 Datasheet, PDF (3/9 Pages) Stanson Technology – The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
N
P
20
-20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA N 0.35
VDS=VGS,ID=-250uA P -0.35
1.0
-1.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V N
VDS=0V,VGS=±12V P
100
-100
nA
VDS=20V,VGS=0V N
1
Zero Gate Voltage Drain
Current
IDSS
VDS=-20V,VGS=0V P
TJ=55℃ V_DS=20V,V_GS=0V N
-1
5 uA
VDS=-20V,VGS=0V P
-5
On-State Drain Current
ID(on)
VDS≧4.5V,VGS=5V N
VDS≦-4.5V,VGS=-5V ^P
2
-2
0
A
VGS=4.5V, ID=0.95A N
VGS=-4.5V,ID=-1.0A P
0.26 0.38
0.42 0.52
Drain-source On-Resistance
RDS(on)
VGS=2.5V, ID=0.75A N
VGS=-2.5V,ID=-0.8 A P
0.32 0.45 _Ω
0.58 0.70
VGS=1.8V, ID=0.65A N
0.42 0.80
VGS=-1.8V,ID=-0.5 A P
0.75 0.95
Forward Tran Conductance
gfs
VDS=10V,ID=1.2A N
VDS=-10V,ID=-1.0A P
2.6
1.5
S
Diode Forward Voltage
VSD
IS=0.5A,VGS=0V N
IS=-0.5A,VGS=0V P
0.8 1.2
-0.8 -1.2
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
N-Channel
N
VDS=10V,VGS=4.5V P
ID≡1.2A
N
P-Channel
P
VDS=-10V,VGS=-4.5V N
ID≡-1.0A
P
N-Channel
N
VDS=10V,RL=20Ω ^P
ID=0.5A,RGEN=6Ω ^N
VGEN=4.5V
P
P-Channel
N
VDS=-10V,RL=20Ω ^P
ID=-0.5A,RGEN=-6Ω N
VGEN=-4.5V
P
1.2 2.0
1.1 1.8
0.2
0.3
nC
0.3
0.2
15 25
18 30
20 30
25 40
25 40 ^nS
20 30
12 20
12 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1