STC6332 Datasheet, PDF (2/9 Pages) Stanson Technology – The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
VGSS
ID
IDM
IS
PD
TJ
Storgae Temperature Range
Thermal Resistance-Junction T≦10Sec
to Ambient
Sready State
TSTG
RθJA
Typical
N
P
20
-20
±12
±12
1.2
-1.0
0.9
-0.7
4
-3
0.6
-0.6
0.3
0.19
-55/150
-55/150
360
360
400
400
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1