STC6332 Datasheet, PDF (1/9 Pages) Stanson Technology – The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

STC6332
N&P Pair Enhancement Mode MOSFET
0.95A / -1A
DESCRIPTION
The STC6332 is the N & P-Channel enhancement mode power field effect transistor
using high cell density DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. This device is particularly suited for low voltage application such as
notebook computer power management and other battery powered circuits, where
high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOT-363/SC-70-6L
PART MARKING
FEATURE
N-Channel
� 20V/0.95A, RDS(ON) = 380mΩ (Typ.)
@VGS = 4.5V
� 20V/0.75A, RDS(ON) = 450mΩ
@VGS = 2.5V
� 20V/0.65A, RDS(ON) = 800mΩ
@VGS = 1.8V
P-Channel
� -20V/-1.0A, RDS(ON) = 520mΩ(Typ.)
@VGS = -4.5V
� -20V/-0.8A, RDS(ON)= 700mΩ
@VGS = - 2.5V
� -20V/-0.7A, RDS(ON)= 700mΩ
@VGS = - 1.8V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and maximum
DC current capability
� SOT-363(SC-70-6L) package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6332 2009. V1