STC4516 Datasheet, PDF (3/9 Pages) Stanson Technology – Complementary Dual Enhancement Mode MOSFET

STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
P-Channel
Static
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS=0V,ID=-250uA -30
V
VDS=VGS,ID=-250uA -1.0
-3.0 V
VDS=0V,VGS=+20V
+100 nA
VDS=-30V,VGS=0V
VDS=-30V,VGS=0V
TJ=55℃
VDS≥-5V,VGS=-10V -40
-1
-5 ^uA
A
VGS=-10V,ID=-7.2A
0.022
Ω
VGS=-4.5V,ID=-5.6A
0.030
VDS=-10V,ID=-7.2A
24
S
IS=-2.3A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
VDS=-15V,VGS=-10V
ID=-7.2A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID=-1A,VGEN=-10V
RG=6Ω
16
23
4.5
1650
350
235
16
17
65
35
nC
pF
30
nS
30
110
80
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1