STC4516 Datasheet, PDF (1/9 Pages) Stanson Technology – Complementary Dual Enhancement Mode MOSFET

STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION
STC4516 is the complementary enhancement mode power field effect transistor using
high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
PIN CONFIGURATION
SOP-8
Top View
8 765
D1 D1 D2 D2
FEATURE
P Channel
z -30V/-7.2A, R = _DS(ON) 22m-ohm (Typ.)
@VGS =-10V
z -30V/-5.6A, R = _DS(ON) 40m-ohm
@VGS =-4.5V
N Channel
z 30V/8.5A, R_DS(ON) = 10m-ohm
@VGS =10V
z 30V/7.8A, R_DS(ON) = 16m-ohm
@VGS =4.5V
z Super high density cell design for extremely
low R_DS(ON)
z SOP-8 package design
STC5416
YA
1 23 4
S1 G1 S2 G2
Y: Year Code A: Process Code
ORDERING INFORMATION
N-Channel MOSFET P-Channel MOSFET
Part Number
Package
Part Marking
STC4516S8RG
SOP-8
STC4516
STC4516S8TG
SOP-8
STC4516
※ Process Code : A ~ Z ; a ~ z
※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1