STC4516 Datasheet, PDF (2/9 Pages) Stanson Technology – Complementary Dual Enhancement Mode MOSFET

STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
P-Channel
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
-30
Gate-Source Voltage
VGSS
+/-20
Continuous Drain Current
Pulsed Drain Current
TA=25℃
ID
TA=70℃
IDM
-7.2
-5.6
-20
Continuous Source Current (Diode Conduction)
IS
-2.3
Power Dissipation
Operation Junction Temperature
TA=25℃
TA=70℃
PD
2.8
1.8
TJ
-55/150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
80
Unit
V
V
A
A
A
W
℃
℃
℃ /W
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
TA=25℃
TA=100℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
+/-20
8.5
7.5
20
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃ /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1