English
Language : 

SST89E564RD_03 Datasheet, PDF (77/86 Pages) Silicon Storage Technology, Inc – FlashFlex51 MCU
FlashFlex51 MCU
SST89E564RD / SST89V564RD / SST89E554RC / SST89V554RC
TABLE 13-11: EXTERNAL MODE FLASH MEMORY PROGRAMMING/VERIFICATION PARAMETERS1
Parameter2,3
Symbol
Min
Max
Reset Setup Time
TSU
3
Read-ID Command Width
TRD
1
PSEN# Setup Time
TES
40
Address, Command, Data Setup Time
TADS
0
Chip-Erase Time
TCE
150
Block-Erase Time
TBE
100
Sector-Erase Time
TSE
30
Program Setup Time
TPROG
1.2
Address, Command, Data Hold
TDH
0
Byte-Program Time4
TPB
50
Select-Block Program Time
TPSB
500
Re-map or Security bit Program Time
TPS
80
Verify Command Delay Time
TOA
50
Verify High Order Address Delay Time
TAHA
50
Verify Low Order Address Delay Time
TALA
50
1. For IAP operations, the program execution overhead must be added to the above timing parameters.
2. Program and Erase times will scale inversely proportional to programming clock frequency.
3. All timing measurements are from the 50% of the input to 50% of the output.
4. Each byte must be erased before programming.
Data Sheet
Units
µs
µs
µs
ns
ms
ms
ms
µs
ns
µs
ns
µs
ns
ns
ns
T13-11.1 1207
©2003 Silicon Storage Technology, Inc.
77
S71207-04-000
12/03